| PART |
Description |
Maker |
| CDSUX-C11 |
CDSUX-C Series - Extended Range Buffer Networks
|
Tyco Electronics
|
| XR-2242 |
Long Rang Timer
|
Exar
|
| TG110-E050N5 TG110-E055N5 TG110-E120N5 TG110-E125N |
Extended Temperature Range, E-Ultra?/a> 10/100BASE-TX SOIC-16 Magnetic Modules
Extended Temperature Range, E-Ultra⑩ 10/100BASE-TX SOIC-16 Magnetic Modules
Extended Temperature Range, E-Ultra 10/100BASE-TX SOIC-16 Magnetic Modules
Extended Temperature Range/ E-Ultra 10/100BASE-TX SOIC-16 Magnetic Modules
DIODE ZENER DUAL ISOLATED 200mW 16Vz 7.8mA-Izt 0.05 0.1uA-Ir 12 SOT-363 3K/REEL
Extended Temperature Range, E-Ultra10/100BASE-TX SOIC-16 Magnetic Modules
|
List of Unclassifed Manufacturers
ETC[ETC]
N.A.
Electronic Theatre Controls, Inc.
|
| XC3S50A-4VQ100C XC3S700A-5FG400C XC3S700A-5FT256C |
Extended Spartan-3A FPGAs, Package: 4VQ100C FPGA, PQFP100
FPGA, 1472 CLBS, 700000 GATES, 280 MHz, PBGA400
FPGA, PBGA256
Extended Spartan-3A FPGAs, Package: 4FGG484C
Extended Spartan-3A FPGAs, Package: 4FT256C
|
Xilinx, Inc.
XILINX INC
|
| KM416V1204BJ KM416V1004BT-L7 KM416V1204BT-L7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns
1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT
|
Samsung Electronic
Samsung semiconductor
|
| K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4 |
8M X 8 EDO DRAM, 45 ns, PDSO32
8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输
(K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| 5962D9960601QUA 5962D9960601QUC 5962D9960601QUX 59 |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose none.
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose none.
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose none.
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 3E4(30krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 3E4(30krad(Si)).
512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish factory option.
512K x 8 SRAM. 100ns access time, 5V operation. Extended industrial temp rang flow. Lead finish gold.
|
Aeroflex Circuit Technology
|
| K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| WSL1506E WSL1506E10E0EBA WSL1506E10E0EEA WSL1506E1 |
Power Metal Strip㈢ Flip Chip (Extended Range) Patents Pending
Power Metal Strip垄莽 Flip Chip (Extended Range) Patents Pending
Power Metal Strip庐 Flip Chip (Extended Range) Patents Pending
Power Metal Strip? Flip Chip (Extended Range) Patents Pending
|
Vishay Siliconix
|
| Y1183150K000A0L Y1183150K000A1L Y1183150K000A9L Y1 |
Ultra High Precision Bulk Metal㈢ Z-Foil Extended Value Range Resistor
Ultra High Precision Bulk Metal? Z-Foil Extended Value Range Resistor
Ultra High Precision Bulk Metal垄莽 Z-Foil Extended Value Range Resistor
|
Vishay Siliconix
|
| TNY279GN-TL TNY274 TNY27409 TNY277PN TNY274PG TNY2 |
Energy Efficient, Off-Line Switcher with Enhanced Flexibility and Extended Power Range 0.709 A SWITCHING REGULATOR, 140 kHz SWITCHING FREQ-MAX, PDSO7
Energy-Effi cient, Off-Line Switcher With Enhanced Flexibility and Extended Power Range
Energy Efficient, Off-Line Switcher with Enhanced Flexibility and Extended Power Range 0.481 A SWITCHING REGULATOR, 140 kHz SWITCHING FREQ-MAX, PDIP7
0.267 A SWITCHING REGULATOR, PDIP7
Energy-Effi cient, Off-Line Switcher With Enhanced Flexibility and Extended Power Range
|
Power Integrations, Inc.
POWER INTEGRATIONS INC
Power Integrations, Inc...
|
| 0812-1X1T-36 |
1port.Y/GO LEDs.RJ45 10/100Base-TX
INTEGRATED CONNECTOR MODULES 10/100Base-TX Extended Temp belCombo⑩ with LEDs
INTEGRATED CONNECTOR MODULES 10/100Base-TX Extended Temp belCombo with LEDs
|
Bel Fuse Inc.
|
